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인물 소개
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엄통행

출처: 발표 시간:2021-03-09 13:30:00 조회 수:
발표 시간:2021-03-09 13:30:00
 
 
기본정보
이름: 엄통행
직함: 보조 연구원
전화(사무실):
사무실 주소:
이메일:yantx@sustech.edu. cn
연구분야: 양자제어, 양서브시뮬레이션


교육 배경
2008.09-2012.07 학사 (리물리학)베이징대학
2012.09-2017.07 박사 (응집물리)베이징대학


경력
2019.09—지금까지  남방과기대 양자과학 및 공학 연구원 보조연구원
2017.07-2019.08 남방과기대 물리학과 박사뒤
2016.01-2016.212 스클라우드대학 광학 연구소 방문학자


논문
1,  Tongxing Yan , Bao-Jie Liu, Kai Xu, Chao Song, Song Liu, Zhensheng Zhang, Hui Deng, Zhiguang Yan, Hao Rong, Keqiang Huang, Man-Hong Yung, Yuanzhen Chen, Dapeng Yu, “Experimental Realization of Nonadiabatic Shortcut to Non-Abelian Geometric Gates”,   Physical Review Letters   122, 080501 (2019).
2,  Tongxing Yan , Junchao Li, Jian Zhang, Mo Li, Xiaodong Hu, “Experimentally study electron overflow from quantum wells into p-side GaN and its effect on the efficiency droop in InGaN/GaN blue-light-emitting-diodes”,   Superlattices and Microstructures   109, 117-122 (2017).
3,  Tongxing Yan , Juan He, Wei Yang, Kamran Rajabi, Weihua Chen, Jiejun Wu, Xiangning Kang, Guoyi Zhang, Xiaodong Hu, “Optical properties of a novel parabolic quantum well structure in InGaN/GaN light emitters”,   physica status solidi (A),   212, 5(925-929), (2015).
4,  Shuailong Zhang, Enyuan Xie,  Tongxing Yan , Wei Yang, Johannes Herrnsdof, Zheng Gong, Ian M. Watson, Erdan Gu, Martin D. Dawson, and Xiaodong Hu, “Hole transport assisted by the piezoelectric field in In0.4Ga0.6N/GaN quantum wells under electrical injection”,   Journal of Applied Physics   118, 125709 (2015). ( first co-author )
5,  Yang Yue, Ji Qingbin, Zong Hua,  Yan Tongxing , Li  Junchao, Wei Tiantian, Hu Xiaodong, “Design of a tandem distributed Bragg reflectors specialized for enhancing the efficiency of GaN-based ultraviolet light-emitting diodes”,   Optics Communications , 374, pp 80-83, (2016).
6,   Yang Wei, Ji Qingbin, Zong Hua, Rajabi Kamran,  Yan Tongxing , Hu Xiaodong, “Theoretical Investigation of Loss-Compensating Hybrid Waveguide Using Quasi-One-Dimensional Surface Plasmon for Green Nanolaser”,   Plasmonics,   11(1), pp 159-165,( 2016).
7,  Qingbin Ji, Lei Li, Wei Zhang, Jia Wang, Peichi Liu, Yahong Xie,  Tongxing Yan   ,Wei Yang, Weihua Chen, Xiaodong Hu, “Dislocation Reduction and Stress Relaxation of GaN and InGaN Multiple Quantum Wells with Improved Performance via Serpentine Channel Patterned Mask”,   ACS Appl. Mater. Interfaces,   8, 21480−21489 (2016). O
8,  Linghai Meng, Xiangning Kang, Ping Wang,  Tongxing Yan ,et al.” Polyimide-isolated ridge waveguide InGaN/GaN laser diodes based on back-ward exposure”,   Superlattices and Microstructures,   91, 313-318, (2016).
9,   Kamran Rajabi, Wei Yang, Ding Li, Juan He, Hua Zong, Qingbin Ji, Bingran Shen,  Tongxin Yan   et al, “The Photoluminescence Properties of QWs with Asymmetrical Step-Like InGaN/GaN Quantum Barriers”,   Superlattices and Microstructures , 80, p 102-110 (2015).
10,  Yang Wei, Zong Hua, Ji Qingbin,  Yan Tongxing , Hu Xiaodong, “The design criteria of hybrid waveguides using semiconductor gain to compensate the metal loss towards nano-scale lasers with high plasmonicity”,   Applied Physics Letters,   105(3)(2014).
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